Effects of built-in electric field and donor impurity on linear and nonlinear optical properties of wurtzite InxGa1 – xN/GaN nanostructures
(a) Linear, nonlinear, and total ACs and (b) RICs for 1s–1p, 1p–1d, and 1d–1f transitions each as a function of incident photon energy for x = 0.2, 0.5, 0.8 in InxGa1 – xN/GaN (5 nm/3 nm) CSQD with impurity and BEF.
