Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer
Lv Quan-Jiang, Zhang Yi-Hong, Zheng Chang-Da †, Gao Jiang-Dong, Zhang Jian-Li, Liu Jun-Lin
       

Simulated conduction band diagrams (red) and electron concentration distributions (black) of InGaN/GaN LEDs without (a) and with (b) n-AlGaN at J = 0.1 A⋅cm−2.