Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Lv Quan-Jiang, Zhang Yi-Hong, Zheng Chang-Da^†, Gao Jiang-Dong, Zhang Jian-Li, Liu Jun-Lin

(a) Semi-logarithmic plot of the forward I–V characteristics of both samples; (b) Diode-ideality factor extracted from the I–V analyses versu forward bias dependence. Three domains named I, II, and III can be distinguished.