Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer |
(a) Near-field emission intensity distribution images of samples A and B at J = 0.1 A⋅cm−2, 1.5 A⋅cm−2, and 7.5 A⋅cm−2. The curve to the right of the images represent the light output measured along the dashed line; (b) Micro-Raman spectra collected from edges and center part of the mesh-patterned unit. (c) Schematic diagram of various recombination current components in mesh-patterned LEDs and its corresponding equivalent circuit. (d) Spatial thermal distribution of samples A and B at J = 0.1 A⋅cm−2. |