Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer

Lv Quan-Jiang, Zhang Yi-Hong, Zheng Chang-Da^†, Gao Jiang-Dong, Zhang Jian-Li, Liu Jun-Lin

(a) Experimentally measured luminous efficacy curves versus current injection of green LEDs with and without n-AlGaN. (b) Semi-logarithmic scale I – V characteristics of samples A and B. The inset is the forward I – V curves of the two LED chips plotted on linear scale.