Analysis of stress-induced inhomogeneous electroluminescence in GaN-based green LEDs grown on mesh-patterned Si (111) substrates with n-type AlGaN layer
Lv Quan-Jiang, Zhang Yi-Hong, Zheng Chang-Da †, Gao Jiang-Dong, Zhang Jian-Li, Liu Jun-Lin
       

FE-SEM images of GaN-based LED wafer surface on Si (111) masked with SiO2 before (a) and after (b) chip process.