Electrical and thermoelectric study of two-dimensional crystal of NbSe<sub>2</sub>

Electrical and thermoelectric study of two-dimensional crystal of NbSe₂

Li Xin-Qi¹, Li Zhi-Lin¹, Zhao Jia-Ji¹, Wu Xiao-Song^{1, 2, †}

Magnetic field induced SIT in S5. (a) Magnetoresistance of sample S5 at different temperatures ranging from 1.43 K to 5.03 K. (b) Zoom-in plot of magnetoresistance in (a) near the crossing point. Inset: R_sq as a function of temperature at B = 2.5 T, 2.8 T, and 3.5 T. (c) Normalized resistance R/R_c as a function of the scaling variable t |B – B_c|. (d) ln (T/T₀) versus ln t. The red line is a linear fit. The zv value is obtained from the slope of the fit.