Strong enhancement of the Nernst effect in 2D NbSe₂. (a) Optical image of a device for probing the Nernst signal. A, B and C, D are the Nernst probes. The scale bar is 10 μm. (b) IH2 dependence of the Nernst voltage at T = 1.47 K and B = 1.5 T. (c) Temperature dependence of the normalized resistance for samples with different thicknesses. (d) Temperature dependence of the sheet resistance and Nernst signal for S5 at B = 0.5 T. The dash line is the temperature dependence of the sheet resistance at B = 0 T. (e) Field dependence of N with different thicknesses at T/T_c = 0.32. (f) Field dependence of N and R at T = 1.4 K.