Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures
Hu Sheng1, Yang Ling1, †, Mi Min-Han2, Hou Bin2, Liu Sheng3, Zhang Meng1, Wu Mei2, Zhu Qing1, Wu Sheng2, Lu Yang2, Zhu Jie-Jie1, Zhou Xiao-Wei1, Lv Ling1, Ma Xiao-Hua2, Hao Yue2
       

Plots of (a) time constant of trap state versus gate voltage and (b) trap state density versus trap state energy of SH:C and DH:Si/C.