Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Hu Sheng¹, Yang Ling^{1, †}, Mi Min-Han², Hou Bin², Liu Sheng³, Zhang Meng¹, Wu Mei², Zhu Qing¹, Wu Sheng², Lu Yang², Zhu Jie-Jie¹, Zhou Xiao-Wei¹, Lv Ling¹, Ma Xiao-Hua², Hao Yue²

Plots of conductance versus radial frequency for DH:Si/C at (a) 300 K and (b) 500 K for some selected low gate voltages, and plots of conductance versus radial frequency at (c) 300 K and (d) 500 K for DH:Si/C at some selected high gate voltages.