Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures
Hu Sheng1, Yang Ling1, †, Mi Min-Han2, Hou Bin2, Liu Sheng3, Zhang Meng1, Wu Mei2, Zhu Qing1, Wu Sheng2, Lu Yang2, Zhu Jie-Jie1, Zhou Xiao-Wei1, Lv Ling1, Ma Xiao-Hua2, Hao Yue2
       

Capacitance–voltage (C–V) characteristics calculated the approximate charge density profiles of (a) SH:C and (b) DH:Si/C at different temperatures.