Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Hu Sheng¹, Yang Ling^{1, †}, Mi Min-Han², Hou Bin², Liu Sheng³, Zhang Meng¹, Wu Mei², Zhu Qing¹, Wu Sheng², Lu Yang², Zhu Jie-Jie¹, Zhou Xiao-Wei¹, Lv Ling¹, Ma Xiao-Hua², Hao Yue²

Schematic cross-section of fabricated (a) SH:C and (b) DH:Si/C HEMT. Energy band diagram and electron distribution of (c) SH:C and (d) DH:Si/C.