Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators

Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO₂ and Al₂O₃ gate insulators

Zhao Yao-Peng, Wang Chong^†, Zheng Xue-Feng^‡, Ma Xiao-Hua, Liu Kai, Li Ang, He Yun-Long, Hao Yue

Plots of drift mobility versus gate voltage V_g of electron for HfO₂ and Al₂O₃ barriers with different thickness values.