Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators
Zhao Yao-Peng, Wang Chong †, Zheng Xue-Feng ‡, Ma Xiao-Hua, Liu Kai, Li Ang, He Yun-Long, Hao Yue
       

Curves of transfer characteristics of recessed MIS-HEMT with (a) 6-nm-thick barrier, (b) 3-nm-thick barrier, and (c) 0-nm-thick barrier, and (d) change trend comparison chart of Vth and Gm.