Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators
Zhao Yao-Peng, Wang Chong †, Zheng Xue-Feng ‡, Ma Xiao-Hua, Liu Kai, Li Ang, He Yun-Long, Hao Yue
       

Molecular structure diagram of HfO2/AlGaN and Al2O3/AlGaN interfaces.