Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators
Comparisons of change trend of Ron and current collapse betwen HfO2 and Al2O3 MIS-HEMTs at maximum gate voltage.
Comparative study on characteristics of Si-based AlGaN/GaN recessed MIS-HEMTs with HfO2 and Al2O3 gate insulators |
Comparisons of change trend of Ron and current collapse betwen HfO2 and Al2O3 MIS-HEMTs at maximum gate voltage. |
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