High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
Zan Ying, Li Yong-Liang †, Cheng Xiao-Hong, Zhao Zhi-Qian, Liu Hao-Yan, Hu Zhen-Hua, Du An-Yan, Wang Wen-Wu
       

HAADF-STEM images for (a) SiGe’s selective epitaxial growth in the narrow trench, and (b) its high resolution image at bottom of SiGe fin.