High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
Zan Ying
, Li Yong-Liang
†
, Cheng Xiao-Hong
, Zhao Zhi-Qian
, Liu Hao-Yan
, Hu Zhen-Hua
, Du An-Yan
, Wang Wen-Wu
(a) TEM and (b) HRSTEM images of SiGe fin along fin direction post SiGe SEG.