High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing

Zan Ying, Li Yong-Liang^†, Cheng Xiao-Hong, Zhao Zhi-Qian, Liu Hao-Yan, Hu Zhen-Hua, Du An-Yan, Wang Wen-Wu

HAADF-STEM images for SiGe fin fabrication in narrow trench by using replacement fin strategy, and its high resolution images (a) at top of SiGe fin, (b) in the middle of SiGe fin, and (c) at interface between SiGe and Si substrate.