High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing
SEM images of (a) Si fin profile, (b) Si fin exposure, (c) Si fin recess, and (d) SiGe’s selective epitaxial growth.
High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing |
SEM images of (a) Si fin profile, (b) Si fin exposure, (c) Si fin recess, and (d) SiGe’s selective epitaxial growth. |
| |