Two-dimensional hexagonal Zn3Si2 monolayer: Dirac cone material and Dirac half-metallic manipulation
Guan Yurou, Song Lingling, Zhao Hui, Du Renjun, Liu Liming, Yan Cuixia †, Cai Jinming ‡
       

(a) The ΔE = E(spin-polarized) – E(spin-nonpolarized) with respect to carrier doping calculated in the Zn3Si2 monolayer. The negative and positive values on the horizontal ordinate are for the hole and electron dopings, respectively. (b), (c) Spin-polarized band structures in the absence of SOC with the doping concentration of 0.2 hole per atom and 0.2 electron per atom, respectively.