Selective linear etching of monolayer black phosphorus using electron beams
Pan Yuhao1, Lei Bao2, 1, Qiao Jingsi1, Hu Zhixin3, Zhou Wu2, Ji Wei1, ‡
       

Electrical properties of predicted zigzag chain vacancy in monolayer BP. (a) Band structure and density of states of the chain vacancy. (b) PCD at bands MB1 and MB2, DCD, and atomic structure of the zigzag edge chain. (c) Band structure of double-periodic chain vacancies with and without up-and-down distortion. (c) PCD at bands MB1 and MB2, DCD, and atomic structure of the zigzag edge chain. (d) Top view (left) and side view (right) of the atomic structure of the chain vacancy with distortion.