Simulation study of high voltage GaN MISFETs with embedded PN junction
Plot of optimized VBK and RON versus NN+ with NN+ ranging from 6× 1018 cm−3 to 2.4× 1019 cm−3 and LGN taking optimized value.
Simulation study of high voltage GaN MISFETs with embedded PN junction |
Plot of optimized VBK and RON versus NN+ with NN+ ranging from 6× 1018 cm−3 to 2.4× 1019 cm−3 and LGN taking optimized value. |
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