Simulation study of high voltage GaN MISFETs with embedded PN junction
(a) The ID–VDS characteristic curves and (b) blocking characteristic cuves from simulation and experiment to validate effectiveness of models used in simulation.
Simulation study of high voltage GaN MISFETs with embedded PN junction |
(a) The ID–VDS characteristic curves and (b) blocking characteristic cuves from simulation and experiment to validate effectiveness of models used in simulation. |
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