Simulation study of high voltage GaN MISFETs with embedded PN junction
Fei Xin-Xing
1
, Wang Ying
2, †
, Luo Xin
1
, Yu Cheng-Hao
2
Plot of
V
BK
and
R
ON
versus
H
P
with
H
P
ranging from 23 nm to 37 nm and
H
N
being 41 nm.