Simulation study of high voltage GaN MISFETs with embedded PN junction
Plot of optimized VBK and RON versus LGN with LGN ranging from 3 μm to 14 μm and NN+ bing 1× 1019 cm−3.
Simulation study of high voltage GaN MISFETs with embedded PN junction |
Plot of optimized VBK and RON versus LGN with LGN ranging from 3 μm to 14 μm and NN+ bing 1× 1019 cm−3. |
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