Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi<sub>2</sub>Te<sub>3</sub>

Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi₂Te₃

Zheng Zhenyi^{1, 2, 3}, Zhang Yue^{1, †}, Zhu Daoqian¹, Zhang Kun¹, Feng Xueqiang¹, He Yu¹, Chen Lei¹, Zhang Zhizhong^{1, 2}, Liu Dijun², Zhang Youguang^{1, 2}, Amiri Pedram Khalili³, Zhao Weisheng^{1, ‡}

(a) Image of 5-μm-width Hall bar device with electrical measurement setup. (b) Anomalous Hall resistance curve of Bi₂Te₃ (8 nm)/CoTb (6 nm) sample. (c) Harmonics resistance curve with applied in-plane magnetic field. H_x-induced damping-like signal (red points) is much larger than H_y-induced field-like signals (blue circles, amplified by 3 times). (d) Effective damping-like field as a linear function of current density in Bi₂Te₃ layer.