Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3 |
(a) Thickness-dependent resistivity change measured by four-point method in MgO/Bi2Te3/MgO trilayers. Inset is an AFM image of Bi2Te3 (8 nm) sample. (b) Stack schematic of the investigated Bi2Te3/CoTb heterostructure. (c) Dependence of the magnetization direction of CoTb layer on x. When x is in the range of 6–8 nm, CoTb layers show excellent PMA properties. |