Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi<sub>2</sub>Te<sub>3</sub>

Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi₂Te₃

Zheng Zhenyi^{1, 2, 3}, Zhang Yue^{1, †}, Zhu Daoqian¹, Zhang Kun¹, Feng Xueqiang¹, He Yu¹, Chen Lei¹, Zhang Zhizhong^{1, 2}, Liu Dijun², Zhang Youguang^{1, 2}, Amiri Pedram Khalili³, Zhao Weisheng^{1, ‡}

(a) Thickness-dependent resistivity change measured by four-point method in MgO/Bi₂Te₃/MgO trilayers. Inset is an AFM image of Bi₂Te₃ (8 nm) sample. (b) Stack schematic of the investigated Bi₂Te₃/CoTb heterostructure. (c) Dependence of the magnetization direction of CoTb layer on x. When x is in the range of 6–8 nm, CoTb layers show excellent PMA properties.