Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
Zhang Mei-Na1, Shao Yan1, 2, Wang Xiao-Lin1, Wu Xiaohan1, ‡, Liu Wen-Jun1, Ding Shi-Jin1, §
       

Schematic diagrams of energy band for various devices under positive gate voltage: (a) the a-IGZO TFT under 540 nm light; (b) the CsPbBr3- and CsPbI3-based hybrid TFTs under 540 nm light; (c) the CsPbBr3-based hybrid TFT under 620 nm light; (d) the CsPbI3-based hybrid TFT under 620 nm light.