Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Zhang Mei-Na¹, Shao Yan^{1, 2}, Wang Xiao-Lin¹, Wu Xiaohan^{1, ‡}, Liu Wen-Jun¹, Ding Shi-Jin^{1, §}

(a) Photoswitching current curve of the a-IGZO/CsPbBr₃ QDs photodetector in dark and under illumination in an on/off cycle. The fitting line of the current during (b) on and (c) off switching.