Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Zhang Mei-Na¹, Shao Yan^{1, 2}, Wang Xiao-Lin¹, Wu Xiaohan^{1, ‡}, Liu Wen-Jun¹, Ding Shi-Jin^{1, §}

(a), (b) Gate voltage-dependent R and (c), (d) I_light/I_dark ratio under different wavelength lights for the CsPbBr₃- and CsPbI₃-based hybrid TFTs, respectively. Dependence of R (V_G = 5 V) and I_light/I_dark maximum on light wavelength for (e) the CsPbBr₃-based hybrid device and (f) the CsPbI₃-based hybrid device.