Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
Zhang Mei-Na1, Shao Yan1, 2, Wang Xiao-Lin1, Wu Xiaohan1, ‡, Liu Wen-Jun1, Ding Shi-Jin1, §
       

Dependence of threshold voltage (VT) shift and mobility on the power density of different wavelength light for (a) the CsPbBr3-based hybrid TFT and (b) the CsPbI3-based one. (c) The VT shifts and (d) mobility of the CsPbBr3- and CsPbI3-based hybrid TFTs as a function of light wavelength, together with those in dark.