Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Zhang Mei-Na¹, Shao Yan^{1, 2}, Wang Xiao-Lin¹, Wu Xiaohan^{1, ‡}, Liu Wen-Jun¹, Ding Shi-Jin^{1, §}

The transfer curves (I_D–V_G) of a-IGZO/CsPbBr₃ QDs and a-IGZO/CsPbI₃ QDs hybrid TFTs under different light intensities with a constant wavelength of (a), (b) 530 nm or (c), (d) 630 nm.