Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels
Zhang Mei-Na1, Shao Yan1, 2, Wang Xiao-Lin1, Wu Xiaohan1, ‡, Liu Wen-Jun1, Ding Shi-Jin1, §
       

(a) Schematic diagram of the TFT photodetector with CsPbX3 (X = Br or I) QDs embedded in the a-IGZO channel. (b) Typical AFM image of the CsPbBr3 QDs layer. (c) Energy band alignment of CsPbI3, CsPbBr3, and a-IGZO. The transfer curves (ID–VG) of the TFTs under different wavelength lights (P = 0.12 mW/cm2) as well as in the dark for (d) the single a-IGZO channel, (e) the a-IGZO/CsPbBr3 QDs hybrid channel, and (f) the a-IGZO/CsPbI3 QDs hybrid channel.