Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

Zhang Mei-Na¹, Shao Yan^{1, 2}, Wang Xiao-Lin¹, Wu Xiaohan^{1, ‡}, Liu Wen-Jun¹, Ding Shi-Jin^{1, §}

(a) TEM image of the representative CsPbBr₃ QDs. (b) XRD patterns, (c) PL (λ_exc = 365 nm), and (d) optical absorption spectra of the CsPbBr₃ and CsPbI₃ QDs spin-coated on a quartz substrate.