Short-term plasticity on optoelectronic synapse transistors. (a) Schematic diagram of MoS₂ phototransistors based optical synaptic device. (b) Potentiation and depression behaviors obtained under different light conditions: visible (λ = 520 nm), dark, and infrared (λ = 1550 nm). (c) 280 nm optical stimulus-emulating EPSC. (d) 365 nm optical stimulus-emulating IPSC. (e) EPSC triggered by a light pulse. (f) EPSCs triggered by a pair of light pulses (500 nm, 0.1 mW/cm², ΔT = 2 s). (g) Schematic diagram demonstrating light programming operation and electrical erasing operation for photonic flash memory based on all-inorganic CsPbBr₃ perovskite quantum dots (QDs). (a) and (b) Reprinted with permission from Ref. [80], Copyright 2019, American Chemical Society. (c)(f) Reprinted with permission from Refs. [54,81], Copyright 2019, Wiley-VCH. (g) Reprinted with permission from Ref. [37], Copyright 2018, Wiley-VCH.