Optoelectric neuromorphic memristors for neuromorphic applications. (a) Optical shielding (OS) and electrical deshielding (ED) of the memristor based on a vertically arranged ZnO nanorod structure. The blue arrows indicate the time scale of the ED process. (b) Photonic EPSC behavior under different light pulse power density. The read voltage is 0.1 V. (c) Photonic PPF behavior. (d) Cumulative probability plot of resistance measured for 150 times on 15 different samples under NIR and dark conditions. (e) Photonic potentiation and electric habituation in the W/MoS₂/p-Si memristive synapse. (f) System integration of the RRAM array with light signal. (g) The light signals are stored in the 13 × 13 RRAM array. (a) Reprinted with permission from Ref. [44], Copyright 2018, AIP Publishing. (b) and (c) Reprinted with permission from Ref. [39], Copyright 2018, American Chemical Society. (d), (f), and (g) Reprinted with permission from Ref. [43], Copyright 2018, Wiley-VCH. (e) Reprinted with permission from Ref. [45], Copyright 2018, Wiley-VCH.