Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

Wang Yang-Ping^{1, 2}, Liu Fu-Fu^{1, 2}, Zhou Cai³, Jiang Chang-Jun^{1, 2, †}

(a)–(d) The control diagram of the transverse magnetic resistance R_xy at the extreme point when the 1-V gate voltage was repeatedly applied and removed.