Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

Wang Yang-Ping^{1, 2}, Liu Fu-Fu^{1, 2}, Zhou Cai³, Jiang Chang-Jun^{1, 2, †}

(a) The measured PHE curve at different gate voltages. (b) At a voltage interval of 0.2 V, the gate voltage is gradually increased from 0 V to 1 V measured PHE curve. (c) At a voltage interval of 0.2 V, the PHE curve measured when the gate voltage is gradually reduced from 1 V to + 0 V. (d) The curve of the transverse magnetoresistance R_xy at the extremum with the gate voltage.