Stress and strain analysis of Si-based III – V template fabricated by ion-slicing

Zhao Shuyan^{1, 2}, Song Yuxin¹, Liang Hao^{1, 2}, Jin Tingting^{1, 2}, Lin Jiajie^{1, 2}, Yue Li^{1, 2}, You Tiangui^{1, 2}, Wang Chang^{1, 2}, Ou Xin^{1, 2, †}, Wang Shumin^{1, 2, 3, ‡}

Strain and stress analyses of structure A. (a) A slice of ε_xx distribution close to the sidewall, extracted from the center plane at 600°C. The deformation is exaggerated by 50 times. (b) and (c) Lateral ε_xx and σ_xx (absolute value) profiles close to the structure sidewall at 600°C, in the center (both vertically and in one of the lateral directions) of the SiO₂ and the InP layer and a depth of 20 μm in the Si layer. (d) Vertical ε_xx profile in the structure center at 600°C. (e) Lateral ε_xx profile in the InP layer at different temperatures adjacent to the sidewall. (f) ε_xx in the layers versus temperature. The solid curves are extracted from the layer center while the dashed lines are from the edge.