Modulation of carrier lifetime in MoS<sub>2</sub> monolayer by uniaxial strain

Modulation of carrier lifetime in MoS₂ monolayer by uniaxial strain

Hong Hao¹, Cheng Yang¹, Wu Chunchun^{1, 2}, Huang Chen¹, Liu Can¹, Yu Wentao¹, Zhou Xu¹, Ma Chaojie¹, Wang Jinhuan^{1, 3}, Zhang Zhihong¹, Zhao Yun³, Xiong Jie², Liu Kaihui^{1, †}

Modulation of MoS₂ carrier lifetime by uniaxial tensile strain: (a)–(d) Evolution of Auger scattering lifetime τ₁ (a), defect trapping lifetime τ₂ (b), carrier–phonon scattering lifetime τ₃ (c), and electron–hole radiative recombination lifetime τ₄ (d) with strain in MoS₂ monolayer. The uniaxial tensile strain significantly prolongs defect trapping lifetime by 440% per percent applied strain, while hardly tunes the other three lifetimes. Error bars here describe standard errors of the fitting parameter.