Modulation of carrier lifetime in MoS<sub>2</sub> monolayer by uniaxial strain

Modulation of carrier lifetime in MoS₂ monolayer by uniaxial strain

Hong Hao¹, Cheng Yang¹, Wu Chunchun^{1, 2}, Huang Chen¹, Liu Can¹, Yu Wentao¹, Zhou Xu¹, Ma Chaojie¹, Wang Jinhuan^{1, 3}, Zhang Zhihong¹, Zhao Yun³, Xiong Jie², Liu Kaihui^{1, †}

PL and Raman spectra of MoS₂ monolayer under strain: (a) schematic illustration of strain apparatus, where the uniaxial tensile strain can be applied on MoS₂ by bending the flexible acrylic substrate. (b) Optical image of transferred MoS₂ monolayers on acrylic substrate. (c) Raman spectroscopy of monolayer MoS₂. The characteristic in-plane E2g1 and out-of -plane A_1g phonon modes are labelled. (d) Strain-dependent PL spectra of monolayer MoS₂. (e) PL peak position under different strain amplitudes. The PL peak red shifts monotonically as the strain increases. (f) PL peak FWHM under different strain amplitudes. The imposition of tensile strain gently broadens the PL peak of MoS₂ monolayer.