Point-contact spectroscopy on antiferromagnetic Kondo semiconductors CeT2Al10 (T = Ru and Os)
Li Jie1, Che Li-Qiang1, Le Tian1, Zhang Jia-Hao2, Sun Pei-Jie2, Takabatake Toshiro1, 3, Lu Xin1, 4, 5, †
       

(a)–(c) The G(V) of CeOs2Al10 at 3.0 K on different cyrstal surfaces. (d) The temperature evolution of the soft point-contact conductance curves G(V) as a function of the biased voltage for CeOs2Al10. The curves are vertically shifted for clarity and the dashed lines are a guide for eyes to show the temperature evolution of the AFM gap Δ1 and hybridization gap Δh, respectively. The arrows mark the position of the kink structure Δ2 in the conductance curve G(V). (e) Temperature dependence of the extracted AFM gap Δ1 for CeOs2Al10 in comparison with the standard mean-field BCS curves and the estimated hybridization gap Δh. (f) Zero-bias conductance curve as a function of temperature G0(T) up to 40 K for a point-contact on CeOs2Al10.