Influence comparison of N<sub>2</sub> and NH<sub>3</sub> nitrogen sources on AlN films grown by halide vapor phase epitaxy

Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy

Chen Jing-Jing^{1, 2}, Huang Jun¹, Su Xu-Jun¹, Niu Mu-Tong¹, Xu Ke^{1, 2, 3, †}

TEM weak beam dark-field images of samples (a), (b) A2, (c), (d) B1, (e), (f) C1, and (g), (h) D1. Each sample was recorded with g vectors of 0002 and 112¯0 , respectively. The white arrows in (a) indicate the location of inversion domains.