Influence comparison of N<sub>2</sub> and NH<sub>3</sub> nitrogen sources on AlN films grown by halide vapor phase epitaxy

Influence comparison of N₂ and NH₃ nitrogen sources on AlN films grown by halide vapor phase epitaxy

Chen Jing-Jing^{1, 2}, Huang Jun¹, Su Xu-Jun¹, Niu Mu-Tong¹, Xu Ke^{1, 2, 3, †}

The FWHMs of (0002) and (101¯2 ) plane XRCs for as-grown AlN films. The samples grown with different nitrogen sources are shown in different colors.