High-performance midwavelength infrared detectors based on InAsSb nBn design

Zhang Xuan^{1, 2}, Jia Qing-Xuan^{1, 2}, Sun Ju^{1, 2}, Jiang Dong-Wei^{1, 2, 3}, Wang Guo-Wei^{1, 2, 3, †}, Xu Ying-Qiang^{1, 2, 3}, Niu Zhi-Chuan^{1, 2, 3, 4, ‡}

Arrhenius plot of dark current in pin detector (red dot) and nBn detector (blue dot) under −0.2 V at 300 K.