High-performance midwavelength infrared detectors based on InAsSb nBn design

Zhang Xuan^{1, 2}, Jia Qing-Xuan^{1, 2}, Sun Ju^{1, 2}, Jiang Dong-Wei^{1, 2, 3}, Wang Guo-Wei^{1, 2, 3, †}, Xu Ying-Qiang^{1, 2, 3}, Niu Zhi-Chuan^{1, 2, 3, 4, ‡}

(a) Arrhenius plot of dark current in pin detector (solid line) and nBn detector (dotted line).^[6] (b) Band profile of nBn detector with n-type barrier layer, at operating bias.