Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN<sub><i>x</i></sub> gate dielectric

Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric

Zhao Ya-Wen^{1, †}, Li Liu-An^{1, †}, Que Tao-Tao¹, Qiu Qiu-Ling¹, He Liang², Liu Zhen-Xing¹, Zhang Jin-Wei¹, Wu Qian-Shu¹, Chen Jia¹, Wu Zhi-Sheng¹, Liu Yang^{1, ‡}

(a) The gate leakage characteristics measured during gate degradation. (b) The evolution of gate leakage current at V_GS = 15 V was extracted from I_G–V_GS curves during the degradation.