Scalable preparation of water-soluble ink of few-layered WSe<sub>2</sub> nanosheets for large-area electronics

Scalable preparation of water-soluble ink of few-layered WSe₂ nanosheets for large-area electronics

Xian Guoyu^{1, 2}, Zhang Jianshuo^{2, 3}, Liu Li¹, Zhou Jun², Liu Hongtao², Bao Lihong², Shen Chengmin², Li Yongfeng³, Qin Zhihui^{1, §}, Yang Haitao^{2, ‡}

(a) Typical output characteristics and (b) transfer characteristics of the WSe₂ transistors. (c) Photocurrent under different laser powers and (d) transient photoresponsivity characteristics of the WSe₂ transistors. All measurements were carried out with 650 nm wavelength under a zero gate–source bias.