Characteristic enhancement in tunnel field-effect transistors via introduction of vertical graded source

Lyu Zhijun¹, Lu Hongliang^{1, †}, Zhang Yuming¹, Zhang Yimen¹, Lu Bin², Zhu Yi¹, Meng Fankang¹, Sun Jiale¹

The transfer characteristics of VGS-TFET with different variation ranges of In component in the vertical graded In_mGa_{1 − m}As source.